SST4416 SOT-23 3L ROHS

2N/PN SST4416 2N4416A N-CHANNEL JFET HIGH FREQUENCY AMPLIFIER FEATURES Replacement For SILICONIX 2N/SST4416 & 2N4416A VERY LOW NOISE FIGURE (400 MHz) 4 dB EXCEPTIONAL GAIN (400 MHz) 10 dB ABSOLUTE MAXIMUM RATINGS1 2N SERIES TO-72 TOP VIEW @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -55 to +150 °C Operating Junction Temperature -55 to +135 °C Maximum Power Dissipation PN SERIES* TO-92 TOP VIEW 1 Continuous Power Dissipation D 300mW 2 SST SERIES SOT-23 TOP VIEW 3 S G D 1 S 2 3 G Maximum Currents Gate Current 10mA Maximum Voltages Gate to Drain or Gate to Source 2N4416 -30V Gate to Drain or Gate to Source 2N4416A -35V *Optional Package for 2N4416 ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC BVGSS Gate to Source Breakdown Voltage 2N/PN/SST4416 -30 2N4416A -35 VGS(off) Gate to Source Cutoff Voltage 2N/PN/SST4416 IDSS IGSS MIN MAX UNITS -2.5 Gate to Source Saturation Current 5 15 2N -0.1 PN/SST -1.0 gfs Forward Transconductance Output Conductance 100 Ciss Input Capacitance2 0.8 Crss Reverse Transfer Capacitance2 en Output 4000 7500 4 Capacitance2 VDS = 15V, ID = 1nA mA nA VDS = 15V, VGS = 0V VGS = -20V, VDS = 0V VGS = -15V, VDS = 0V µS VDS = 15V, VGS = 0V, f = 1kHz pF VDS = 15V, VGS = 0V, f = 1MHz nV/√Hz VDS = 10V, VGS = 0V, f = 1kHz 2 Equivalent Input Noise Voltage Linear Integrated Systems V -6 gos Coss CONDITIONS IG = -1µA, VDS = 0V -6 2N4416A Gate Leakage Current TYP 6 • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201133 07/25/2019 Rev#A11 ECN# 2N4416 HIGH FREQUENCY ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) 100 MHz 400 MHz SYMBOL CHARACTERISTIC giss Input Conductance2 100 1000 biss Input Susceptance2 2500 10000 goss Output Conductance2 75 100 boss Output Susceptance2 1000 4000 Gfs Forward Transconductance2 Gain2 Gps Power NF Noise Figure2 MIN MAX MIN MAX UNITS CONDITIONS µS VDS = 15V, VGS = 0V 4000 18 10 2 4 VDS = 15V, ID = 5mA dB VDS = 15V, ID = 5mA, RG = 1kΩ SOT-23 0.89 1.03 0.37 0.51 1 1.78 2.05 2.80 3.04 3 2 1.20 1.40 2.10 2.64 0.89 1.12 0.085 0.180 0.013 0.100 0.55 DIMENSIONS IN MILLIMETERS *Dimensions in inches NOTES 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. Not production tested, guaranteed by design. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems develops and produces the highest performance semiconductors of their kind in the industry. Linear Systems, founded in 1987, uses patented and proprietary processes and designs to create its high performance discrete semiconductors. Expertise brought to the company is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company founder John H. Hall. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201133 07/25/2019 Rev#A11 ECN# 2N4416